Silicon carbide semiconductor device
US10446649B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 19, 2013 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Jan 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/031
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes: an element isolation layer and an electric field relaxation layer. The element isolation layer is arranged, from the surface of a base region to be deeper than the base region, between a main cell region and a sense cell region, and isolates the main cell region from the sense cell region. The electric field relaxation layer is arranged from a bottom of the base region to be deeper than the element isolation layer. The electric field relaxation layer is divided into a main cell region portion and a sense cell region portion. At least a part of the element isolation layer is arranged inside of a division portion of the electric field relaxation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.