Akitaka Soeno
38Patents
5h-index
39Co-inventors
65Inventor score
Filing activity: Aug 28, 2008 → Jan 23, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8248116B2 | Method of driving reverse conducting semiconductor device, semiconductor device and power supply device | Electricity | 11 | Active |
| US9520487B2 | Reverse conducting insulated gate bipolar transistor | Electricity | 8 | Active |
| US7952143B2 | Semiconductor device having IGBT and diode | Electricity | 7 | Active |
| US8716746B2 | Semiconductor device | Electricity | 6 | Active |
| US9379224B2 | Semiconductor device | Electricity | 5 | Active |
| US8952449B2 | Semiconductor device having both IGBT area and diode area | Electricity | 5 | Active |
| US8384211B2 | Semiconductor apparatus with improved efficiency of thermal radiation | Electricity | 5 | Active |
| US9029871B2 | Semiconductor device | Electricity | 4 | Active |
| US8330185B2 | Semiconductor device having semiconductor substrate including diode region and IGBT region | Electricity | 4 | Active |
| US8362519B2 | Semiconductor device | Electricity | 4 | Active |
| US9647108B2 | Silicon carbide semiconductor device | Electricity | 4 | Active |
| US9853139B2 | Semiconductor device and method for manufacturing the semiconductor device | Electricity | 4 | Active |
| US9818860B2 | Silicon carbide semiconductor device and method for producing the same | Electricity | 3 | Active |
| US8299496B2 | Semiconductor device having semiconductor substrate including diode region and IGBT region | Electricity | 3 | Active |
| US9865728B2 | Switching device | Electricity | 3 | Active |
| US9768287B1 | Switching device | Electricity | 3 | Active |
| US8686467B2 | Semiconductor device comprising semiconductor substrate and having diode region and IGBT region | Electricity | 3 | Active |
| US9722075B2 | Semiconductor device | Electricity | 2 | Active |
| US8531857B2 | Power supply device and method for driving the same | Electricity | 2 | Active |
| US9773883B2 | Method for manufacturing insulated gate type switching device having low-density body region and high-density body region | Electricity | 2 | Active |
| US9941273B2 | Semiconductor device and method of manufacturing the semiconductor device | Electricity | 2 | Active |
| US9966460B2 | Switching device | Electricity | 2 | Active |
| US9543428B2 | Silicon carbide semiconductor device and method for producing the same | Electricity | 2 | Active |
| US9627248B2 | Insulated gate type semiconductor device | Electricity | 1 | Active |
| US8723220B2 | Semiconductor device | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.