Manufacturing method of oxide semiconductor device
US10446689B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2019 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Feb 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide semiconductor device includes a substrate, a first patterned oxide semiconductor layer, a source electrode, a drain electrode, and a sidewall spacer. The first patterned oxide semiconductor layer is disposed on the substrate. The source electrode and the drain electrode are disposed on the first patterned oxide semiconductor layer. The sidewall spacer is disposed on a sidewall of the first patterned oxide semiconductor layer. The sidewall spacer may be used to improve the performance of blocking impurities from entering the first patterned oxide semiconductor layer via the sidewall, and the electrical performance and the reliability of the oxide semiconductor device may be enhanced accordingly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.