Method for manufacturing a magnetic memory element array using high angle side etch to open top electrical contact
US10446742B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 9, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Feb 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a magnetic memory element array. A plurality of magnetic memory elements are formed on a substrate, and a dielectric fill layer such as SiO2 or SiNx is deposited over the magnetic memory element pillars. An ion milling is then performed at a high angle (at least 70 degrees) relative normal to remove topographic dielectric features from areas over the magnetic memory elements. Optionally, additional ion milling processes can be performed at increasing angles relative to normal until the dielectric material has been removed from the areas over the magnetic memory elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.