Diffused resistive memory cell with buried active zone
US10446748B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 23, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Aug 23, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus for non-volatile memory, and more specifically a ReRAM device with a buried resistive memory cell. The memory cell includes a first contact disposed on a substrate, an active layer, a second contact, a first diffused zone disposed within the active layer, a second diffused zone disposed within the active layer, and an active switching zone disposed within the active layer in between the first diffused zone and the second diffused zone. In one embodiment, the active zone may be doped by diffusion or ion implantation and/or may be fabricated utilizing a self-aligned process. In another embodiment, the memory cell may combine a deep implant and shallow diffusion well to create the active zone. The vertically and laterally isolated buried resistive memory cell concentrates the electric field away from the edges of the device and eliminates the effects of interface impurities and contaminants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.