Daniel Bedau
40Patents
4h-index
17Co-inventors
56Inventor score
Filing activity: Nov 16, 2011 → Feb 6, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8755222B2 | Bipolar spin-transfer switching | Electricity | 45 | Active |
| US10700093B1 | Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same | Electricity | 34 | Active |
| US9711718B1 | Nonvolatile bipolar junction memory cell | Electricity | 7 | Active |
| US8941196B2 | Precessional reversal in orthogonal spin transfer magnetic RAM devices | Physics | 6 | Active |
| US10388646B1 | Electrostatic discharge protection devices including a field-induced switching element | Electricity | 4 | Active |
| US11112468B2 | Magnetoresistive sensor array for molecule detection and related detection schemes | Physics | 4 | Active |
| US11170852B1 | Cross-bar arrays having steering element with diode | Physics | 4 | Active |
| US11271009B2 | Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same | Electricity | 2 | Active |
| US9812184B2 | Current induced spin-momentum transfer stack with dual insulating layers | Electricity | 2 | Active |
| US9449668B2 | Current induced spin-momentum transfer stack with dual insulating layers | Electricity | 2 | Active |
| US10020346B2 | Resistive memory device by substrate reduction | Electricity | 2 | Active |
| US9953705B2 | Planar memory cell architectures in resistive memory devices | Physics | 1 | Active |
| US9721636B1 | Method for controlled switching of a MRAM device | Physics | 1 | Active |
| US10553645B2 | Resistive memory device by substrate reduction | Electricity | 0 | Active |
| US12205640B2 | Overwrite read methods for resistance switching memory devices | Physics | 0 | Active |
| US11004508B2 | One selector one resistor RAM threshold voltage drift and offset voltage compensation methods | Electricity | 0 | Active |
| US11208682B2 | Enhanced optical detection for nucleic acid sequencing using thermally-dependent fluorophore tags | Performing Operations; Transporting | 0 | Active |
| US9236103B2 | Bipolar spin-transfer switching | Electricity | 0 | Active |
| US11609208B2 | Devices and methods for molecule detection based on thermal stabilities of magnetic nanoparticles | Physics | 0 | Active |
| US10644066B2 | Sidewall insulated resistive memory devices | Electricity | 0 | Active |
| US11811425B2 | Neural network soft information detector in a read channel | Electricity | 0 | Active |
| US11355188B2 | One selector one resistor RAM threshold voltage drift and offset voltage compensation methods | Electricity | 0 | Active |
| US10446748B2 | Diffused resistive memory cell with buried active zone | Physics | 0 | Active |
| US12259353B2 | Amplifiers for biological sensing applications | Physics | 0 | Active |
| US11946894B2 | Low noise amplifiers with feedback for nanopore applications | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.