Plasma processing apparatus and plasma processing method
US10453695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2017 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Sep 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.