Diffused contact extension dopants in a transistor device
US10453754B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2018 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Jun 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure is directed to various methods of diffusing contact extension dopants in a transistor device and the resulting devices. One illustrative method includes forming a first contact opening between two adjacent gate structures formed above a first fin, the first contact opening exposing a first region of the first fin, forming a first contact recess in the first region, forming a first doped liner in the first contact recess, performing an anneal process to diffuse dopants from the first doped liner into the first fin to form a first doped contact extension region in the first fin, and performing a first epitaxial growth process to form a first source/drain region in the first contact recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.