Zinc-cobalt barrier for interface in solder bond applications
US10453817B1 · kind B1 · utility
4Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2018 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Jun 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/81815
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.