Patent · US Active

Semiconductor device

US10453838B2 · kind B2 · utility

1Cited by
13References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 29, 2017
Grant dateOct 22, 2019
Priority date
Expiry dateAug 29, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L23/53295
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a substrate including a first region and a second region, a cell gate pattern on the first region of the substrate, a dummy gate pattern on the second region of the substrate, a resistor pattern on the second region of the substrate and over the dummy gate pattern, and a connection structure coupled to each of the connection regions. The resistor pattern includes a body region and connection regions at both sides of the body region. The dummy gate pattern overlaps the body region and does not be overlap the connection regions, when viewed in a plan view.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.