Heonjong Shin
31Patents
4h-index
46Co-inventors
63Inventor score
Filing activity: Jun 26, 1992 → Jun 16, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5300816A | Semiconductor wafer with improved step coverage along scribe lines | Electricity | 20 | Expired |
| US9515172B2 | Semiconductor devices having isolation insulating layers and methods of manufacturing the same | Electricity | 14 | Active |
| US10964791B2 | Semiconductor device having silicides and methods of manufacturing the same | Electricity | 5 | Active |
| US7923805B2 | Semiconductor device including high voltage and low voltage MOS devices | Electricity | 4 | Active |
| US9673300B2 | Semiconductor devices including a gate core and a fin active core and methods of fabricating the same | Electricity | 3 | Active |
| US10204821B2 | Semiconductor devices having isolation insulating layers and methods of manufacturing the same | Electricity | 3 | Active |
| US10923475B2 | Semiconductor device | Electricity | 3 | Active |
| US10373953B2 | Semiconductor device including a semiconductor extension layer between active regions | Electricity | 3 | Active |
| US10497608B2 | Semiconductor devices having isolation insulating layers and methods of manufacturing the same | Electricity | 3 | Active |
| US9978746B2 | Semiconductor devices and methods of manufacturing the same | Electricity | 2 | Active |
| US9728643B2 | Semiconductor devices having a spacer on an isolation region | Electricity | 2 | Active |
| US8735238B2 | Method of fabricating a semiconductor device including high voltage and low voltage MOS devices | Electricity | 2 | Active |
| US11264386B2 | Semiconductor device | Electricity | 1 | Active |
| US10453838B2 | Semiconductor device | Electricity | 1 | Active |
| US11393909B2 | Semiconductor devices inlcluding a fin field effect transistor | Electricity | 1 | Active |
| US9576613B2 | Semiconductor device | Physics | 1 | Active |
| US11177362B2 | Semiconductor device | Electricity | 1 | Active |
| US11335679B2 | Semiconductor device and method of fabricating the same | Electricity | 0 | Active |
| US11705454B2 | Active regions via contacts having various shaped segments off-set from gate via contact | Electricity | 0 | Active |
| US12431433B2 | Semiconductor device | General | 0 | Revoked |
| US11728342B2 | Semiconductor device and method of fabricating the same | Electricity | 0 | Active |
| US12356659B2 | Semiconductor device | Electricity | 0 | Active |
| US11538913B2 | Semiconductor device having silicides and methods of manufacturing the same | Electricity | 0 | Active |
| US11978775B2 | Method of fabricating semiconductor devices including a fin field effect transistor | Electricity | 0 | Active |
| US10825810B2 | Semicondcutor device including a semiconductor extension layer between active regions | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.