Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device
US10453913B2 · kind B2 · utility
3Cited by
9References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Mar 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02244
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.