Exposure activated chemically amplified directed self-assembly (DSA) for back end of line (BEOL) pattern cutting and plugging
US10459338B2 · kind B2 · utility
1Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2017 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Apr 5, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0149
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.