Method for programming non-volatile memory and memory system
US10460797B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2017 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Sep 8, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a non-volatile memory and a memory system are provided. Each of multiple cells of the non-volatile memory stores data having at least 2 bits. The method includes the following steps. At least one programming pulse is provided for programming a target cell of the cells. At least one program-verify pulse is provided for verifying whether the target cell is successfully programmed. It is determined that whether a threshold voltage of the target cell is greater than or equal to a program-verify voltage. When the threshold voltage is greater than or equal to the program-verify voltage, the target cell is set as successfully programmed. Next, a post-verifying operation is performed to the successfully programmed cell. The post-verifying operation includes determining whether the threshold voltage of the target cell is greater than or equal to a post-verifying voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.