Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film
US10460934B2 · kind B2 · utility
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29Claims
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Key dates
| Filing date | Aug 21, 2018 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Aug 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/875
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.