Plasma doping using a solid dopant source
US10460941B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 15, 2017 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | May 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3365
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of processing a workpiece is disclosed, where the interior surfaces of the plasma chamber are first coated using a conditioning gas that contains the desired dopant species. A working gas, which does not contain the desired dopant species, is then introduced and energized to form a plasma. This plasma is used to sputter the desired dopant species from the interior surfaces. This dopant species is deposited on the workpiece. A subsequent implant process may then be performed to implant the dopant into the workpiece. The implant process may include a thermal treatment, a knock in mechanism, or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.