Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure
US10460945B2 · kind B2 · utility
0Cited by
3References
29Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 2012 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Nov 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a machine (1) adapted to metallize a cavity of a semi-conductive or conductive substrate such as a structure of the through silicon via type, according to a metallization process comprising the steps consisting of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.