Method for forming semiconductor device structure with overlay grating
US10461037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2017 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Nov 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.