Multiple deep trench isolation (MDTI) structure for CMOS image sensor
US10461109B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2017 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Nov 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a first depth within the substrate, and surrounding the photodiode. A multiple deep trench isolation (MDTI) structure is disposed within the individual pixel region, extending from the back-side of the substrate to a second depth within the substrate, and overlying the photodiode. A dielectric layer fills in a BDTI trench of the BDTI structure and a MDTI trench of the MDTI structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.