Assemblies having conductive structures along pillars of semiconductor material
US10461185B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2018 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | May 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.