Substrate processing method and substrate processing apparatus
US10464107B2 · kind B2 · utility
1Cited by
2References
19Claims
0Family size
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Key dates
| Filing date | Oct 21, 2014 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Sep 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02057
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method for removing a resist from a substrate, the substrate comprising a surface layer which has been cured, and having a pattern disposed inside the resist. The method includes an SPM supplying step of supplying an SPM, formed by mixing sulfuric acid and a hydrogen peroxide solution, to the substrate and a liquid temperature increasing step of changing, in parallel to the SPM supplying step, a mixing ratio of the sulfuric acid and the hydrogen peroxide solution used to form the SPM to increase the liquid temperature of the SPM supplied to the substrate in the SPM supplying step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.