Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US10465289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2016 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Aug 15, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; o+p>1; each R is independently hydrogen or or a C1-C4 hydrocarbon group; each L is independently a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate or keto-iminate, wherein R′ is a H or a C1-C4 hydrocarbon group; and each L′ is independently NR″ or O, wherein R″ is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.