System and method for field-by-field overlay process control using measured and estimated field parameters
US10466596B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2014 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Apr 23, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure is directed to a method of determining at least one correctable for a process tool. In an embodiment, the method includes the steps of: measuring one or more parameter values at one or more measurement locations of each field of a selection of measured fields of a wafer; estimating one or more parameter values for one or more locations of each field of a selection of unmeasured fields of the wafer; and determining at least one correctable for a process tool based upon the one or more parameter values measured at the one or more measurement locations of each field of the selection of measured fields of the wafer and the one or more parameter values estimated for the one or more locations of each field of the selection of unmeasured fields of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.