Patent · US Active

Method and circuit to enable wide supply voltage difference in multi-supply memory

US10468095B2 · kind B2 · utility

0Cited by

27References

19Claims

0Family size

Assignee

STMicroelectronics International N.V. · NL

Inventors

Piyush Jain · Irvine, US
Vivek Asthana · Greater Noida, IN
Naveen Batra · Greater Noida, IN

Key dates

Filing date	May 24, 2018
Grant date	Nov 5, 2019
Priority date	—
Expiry date	May 24, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG11C5/14
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method of operating a memory device includes providing a first voltage to a memory array, providing a second voltage to a peripheral logic circuit, receiving an access request, and in response to the access request, increasing a third voltage of a bit line of the memory array during a precharge phase.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.