Naveen Batra
6Patents
2h-index
5Co-inventors
36Inventor score
Filing activity: Sep 30, 2009 → May 24, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8259486B2 | Self-timed write boost for SRAM cell with self mode control | Physics | 10 | Active |
| US9508405B2 | Method and circuit to enable wide supply voltage difference in multi-supply memory | Physics | 5 | Active |
| US8154911B2 | Memory device and method of writing data to a memory device | Physics | 1 | Active |
| US10008258B2 | Method and circuit to enable wide supply voltage difference in multi-supply memory | Physics | 0 | Active |
| US10468095B2 | Method and circuit to enable wide supply voltage difference in multi-supply memory | Physics | 0 | Active |
| US8780615B2 | Memory device and method of writing data to a memory device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.