Read threshold adjustment with feedback information from error recovery
US10468117B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jul 27, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage device with a memory may optimize the setting of a read threshold or read level. A feedback mechanism may be used responsive to there being a read retry error for providing the read threshold from the read retry. Specifically, recovery from a read failure can provide feedback information for dynamically optimizing read threshold values. Read threshold adjustments may occur each time there is a successful error recovery. The read threshold adjustment scheme may select one logical page or multiple logical pages from a recovered region. If a read threshold is found to be working, this threshold may be part of a feedback message to make an informed adjustment that optimizes the read threshold of other pages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.