Integrated circuits with magnetic tunnel junctions and methods of producing the same
US10468171B1 · kind B1 · utility
1Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jul 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a seed layer, first and second pinned layers, and a coupling layer. The seed layer includes holmium. The first pinned layer overlies the seed layer, where the first pinned layer is magnetic, and the non-magnetic coupling layer overlies the first pinned layer. The second pinned layer overlies the coupling layer, where the second pinned layer is also magnetic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.