Inventor · Sunnyvale, CA, US

Dimitri Houssameddine

69Patents
6h-index
70Co-inventors
71Inventor score

Filing activity: May 26, 2010 → Jul 31, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8279666B2 Spin polarised magnetic device Electricity 124 Active
US8686484B2 Spin-torque magnetoresistive memory element and method of fabricating same Electricity 65 Active
US9419208B2 Magnetoresistive memory element and method of fabricating same Electricity 44 Active
US9136464B1 Apparatus and process for manufacturing ST-MRAM having a metal oxide tunnel barrier Emerging Cross-Sectional Technologies 40 Active
US9159906B2 Spin-torque magnetoresistive memory element and method of fabricating same Electricity 17 Active
US9553258B2 Magnetoresistive memory element and method of fabricating same Electricity 15 Active
US10381339B1 Integrated circuits with memory cell test circuits and methods for producing the same Physics 5 Active
US9378792B2 Method of writing to a spin torque magnetic random access memory Physics 5 Active
US9947865B2 Magnetoresistive stack and method of fabricating same Electricity 5 Active
US9293182B2 Random access memory architecture for reading bit states Physics 4 Active
US9502089B2 Short detection and inversion Physics 4 Active
US9721632B2 Redundant magnetic tunnel junctions in magnetoresistive memory Physics 4 Active
US9444037B2 Magnetoresistive memory element having a metal oxide tunnel barrier Emerging Cross-Sectional Technologies 4 Active
US10199574B2 Magnetoresistive stack and method of fabricating same Electricity 3 Active
US9293698B2 Magnetoresistive structure having a metal oxide tunnel barrier and method of manufacturing same Emerging Cross-Sectional Technologies 3 Active
US9548095B2 Redundant magnetic tunnel junctions in magnetoresistive memory Physics 3 Active
US8766733B2 Magnetoresistive radiofrequency oscillator Electricity 3 Active
US9881695B2 Short detection and inversion Physics 2 Active
US9543041B2 Configuration and testing for magnetoresistive memory to ensure long term continuous operation Physics 2 Active
US10199122B2 Short detection and inversion Physics 2 Active
US10347828B2 Magnetoresistive stack and method of fabricating same Electricity 2 Active
US9721637B2 Method of writing to a spin torque magnetic random access memory Physics 2 Active
US11757451B2 Systems and methods for configuration of a configuration bit with a value Physics 1 Active
US10622554B2 Magnetoresistive stack and method of fabricating same Electricity 1 Active
US11944013B2 Magnetic tunnel junction device with minimum stray field Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.