Rinse solution and method of fabricating integrated circuit device by using the same
US10468250B2 · kind B2 · utility
0Cited by
4References
16Claims
0Family size
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Key dates
| Filing date | Oct 28, 2016 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | May 18, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A rinse solution includes a surfactant and deionized water. The surfactant includes a compound having a branched structure, the compound having a branched structure including a hydrophobic group-containing main chain and a plurality of side chains that are branched from the main chain and have at least one hydrophilic functional group. A method of fabricating an integrated circuit device includes forming a photoresist pattern, followed by applying the rinse solution onto the photoresist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.