Patent · US Active

Method for synchronous wet etching processing of differential microstructures

US10468265B1 · kind B1 · utility

0Cited by
1References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 15, 2019
Grant dateNov 5, 2019
Priority date
Expiry dateApr 15, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3083
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for synchronous wet etching processing of differential microstructures, including the following steps: step a: performing photoetching on a processing surface of a workpiece to be processed to develop the workpiece; step b: affixing a mask to a surface opposite to the processing surface of the workpiece; step c: continuously cooling the mask; step d: placing the cooled mask and the workpiece in a wet etching device; and adding an etchant to the processing surface of the workpiece to start etching; step e: removing the mask and the workpiece from the wet etching device after the set etching time; separating the mask and the workpiece to obtain a workpiece with a etching structure. A temperature difference is formed between the pattern area to be processed and the retaining area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.