Method for synchronous wet etching processing of differential microstructures
US10468265B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2019 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Apr 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3083
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for synchronous wet etching processing of differential microstructures, including the following steps: step a: performing photoetching on a processing surface of a workpiece to be processed to develop the workpiece; step b: affixing a mask to a surface opposite to the processing surface of the workpiece; step c: continuously cooling the mask; step d: placing the cooled mask and the workpiece in a wet etching device; and adding an etchant to the processing surface of the workpiece to start etching; step e: removing the mask and the workpiece from the wet etching device after the set etching time; separating the mask and the workpiece to obtain a workpiece with a etching structure. A temperature difference is formed between the pattern area to be processed and the retaining area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.