Water-free etching methods
US10468267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.