Semiconductor device capable of suppressing cracks of through-hole protective film and short circuit of adjacent through-electrodes
US10468322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Feb 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a first substrate having connectors at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connectors; through-electrodes respectively arranged at through-holes and electrically connected with the connectors; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.