Semiconductor device and manufacturing method thereof
US10468334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Sep 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment includes a semiconductor substrate including a first face having semiconductor elements, and a second face on an opposite side to the first face. A first insulating film is located on the first face of the semiconductor substrate. A conductor is located on the first insulating film. A metal electrode is located between the first face and the second face and passes through the semiconductor substrate to be in contact with the conductor. A second insulating film is located between the metal electrode and the semiconductor substrate. A boundary face between the first insulating film and the second insulating film is located on a side of the conductor relative to the first face of the semiconductor substrate and is inclined to approach the conductor toward a center portion of the metal electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.