Formation of fine pitch traces using ultra-thin PAA modified fully additive process
US10468342B2 · kind B2 · utility
1Cited by
7References
22Claims
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Key dates
| Filing date | Feb 2, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Feb 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to produce a substrate suitable for diffusion bonding is described. A flexible dielectric substrate is provided. An alkaline modification is applied to the dielectric substrate to form a polyamic acid (PAA) anchoring layer on a surface of the dielectric substrate. A Ni—P seed layer is electrolessly plated on the PAA layer. Copper traces are plated within a photoresist pattern on the Ni—P seed layer. A surface finishing layer is electrolytically plated on the copper traces. The photoresist pattern and Ni—P seed layer not covered by the copper traces are removed to complete the substrate suitable for diffusion bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.