FinFET device with oxidation-resist STI liner structure
US10468409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Mar 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a fin structure protruding from a semiconductor substrate. The fin structure includes a first portion and an overlying second portion. The first portion is formed of a material that is the same as that of the semiconductor substrate and different from that of the second portion. The semiconductor device structure also includes a liner structure and an isolation feature. The liner structure includes a carbon-doped silicon oxide film covering the semiconductor substrate and the first portion of the first fin structure and a nitrogen-containing film over the carbon-doped silicon oxide film. The isolation feature is over the nitrogen-containing film and surrounded by the liner structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.