Sung-En Lin
25Patents
2h-index
40Co-inventors
53Inventor score
Filing activity: Jun 9, 2006 → Jan 29, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11437245B2 | Germanium hump reduction | Electricity | 3 | Active |
| US10468409B2 | FinFET device with oxidation-resist STI liner structure | Electricity | 2 | Active |
| US10361112B2 | High aspect ratio gap fill | Electricity | 2 | Active |
| US11888049B2 | Dielectric isolation structure for multi-gate transistors | Electricity | 1 | Active |
| US12113113B2 | Semiconductor device with a core-shell feature and method for forming the same | Electricity | 1 | Active |
| US10734227B2 | Semiconductor device and method | Electricity | 1 | Active |
| US11195717B2 | Semiconductor device and method | Electricity | 1 | Active |
| US11948843B2 | Method for forming hardmask formation by hybrid materials in semiconductor device | Electricity | 0 | Active |
| US11557518B2 | Gapfill structure and manufacturing methods thereof | Electricity | 0 | Active |
| US7612005B2 | Cerium-based oxide fiber and its fabricating method | Chemistry; Metallurgy | 0 | Active |
| US11810824B2 | Semiconductor device and manufacturing method thereof | Electricity | 0 | Active |
| US12002719B2 | Gapfill structure and manufacturing methods thereof | Electricity | 0 | Active |
| US11532523B2 | Gapfill structure and manufacturing methods thereof | General | 0 | Revoked |
| US12349381B2 | Dielectric isolation structure for multi-gate transistors | Electricity | 0 | Active |
| US11848209B2 | Patterning semiconductor devices and structures resulting therefrom | Electricity | 0 | Active |
| US11532733B1 | Dielectric isolation structure for multi-gate transistors | Electricity | 0 | Active |
| US12266541B2 | Semiconductor device and method | Electricity | 0 | Active |
| US12166076B2 | Semiconductor device and methods of forming the same | Electricity | 0 | Active |
| US12080553B2 | Semiconductor device and method of manufacture | Electricity | 0 | Active |
| US12266529B2 | Patterning semiconductor devices and structures resulting therefrom | Electricity | 0 | Active |
| US8236278B2 | Mono-dispersive spherical indium oxide-based particles and method for producing the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US11854819B2 | Germanium hump reduction | Electricity | 0 | Active |
| US12094784B2 | Method for manufacturing semiconductor device | Electricity | 0 | Active |
| US12376339B2 | Semiconductor device structure and method for forming the same | Electricity | 0 | Active |
| US11955370B2 | Semiconductor devices and methods of manufacture | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.