Metal gate modulation to improve kink effect
US10468410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | May 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments, the present disclosure, relates to an integrated chip. The integrated chip has an isolation structure arranged within a substrate. The isolation structure has interior surfaces defining one or more divots recessed below an uppermost surface of the isolation structure and sidewalls defining an opening exposing the substrate. A source region is disposed within the opening. A drain region is also disposed within the opening and is separated from the source region by a channel region along a first direction. A gate structure extends over the channel region. The gate structure includes a first gate electrode region having a first composition of one or more materials and a second gate electrode region disposed over the one or more divots and having a second composition of one or more materials different than the first composition of one or more materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.