BEOL cross-bar array ferroelectric synapse units for domain wall movement
US10468432B1 · kind B1 · utility
2Cited by
8References
20Claims
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Key dates
| Filing date | May 30, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | May 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is presented for incorporating a metal-ferroelectric-metal (MFM) structure in a cross-bar array in back end of the line (BEOL) processing. The method includes forming a first electrode, forming a ferroelectric layer in direct contact with the first electrode, forming a second electrode in direct contact with the ferroelectric layer, such that the first electrode and the ferroelectric layer are perpendicular to the second electrode to form the cross-bar array, and biasing the second electrode to adjust domain wall movement within the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.