Inventor · Fishkill, NY, US

Jin-Ping Han

69Patents
6h-index
77Co-inventors
75Inventor score

Filing activity: Sep 16, 1998 → Feb 22, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6067244A Ferroelectric dynamic random access memory Physics 105 Expired
US7838372B2 Methods of manufacturing semiconductor devices and structures thereof Electricity 17 Active
US8252649B2 Methods of fabricating semiconductor devices and structures thereof Electricity 13 Active
US9934838B1 Pulse shaping unit cell and array for symmetric updating Physics 12 Active
US7893502B2 Threshold voltage improvement employing fluorine implantation and adjustment oxide layer Electricity 8 Active
US7772676B2 Strained semiconductor device and method of making same Electricity 7 Active
US7696019B2 Semiconductor devices and methods of manufacturing thereof Electricity 6 Active
US8063449B2 Semiconductor devices and methods of manufacture thereof Electricity 5 Active
US8198194B2 Methods of forming p-channel field effect transistors having SiGe source/drain regions Electricity 5 Active
US7935593B2 Stress optimization in dual embedded epitaxially grown semiconductor processing Electricity 5 Active
US10319818B2 Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end Electricity 3 Active
US9929250B1 Semiconductor device including optimized gate stack profile Electricity 3 Active
US7795107B2 Method for forming isolation structures Electricity 3 Active
US7800182B2 Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same Electricity 3 Active
US9142547B2 Methods of manufacturing resistors and structures thereof Electricity 3 Active
US8647929B2 Semiconductor devices and methods of manufacturing thereof Electricity 2 Active
US10468432B1 BEOL cross-bar array ferroelectric synapse units for domain wall movement Electricity 2 Active
US9748358B2 Gap fill of metal stack in replacement gate process Electricity 2 Active
US10381061B2 One-transistor synapse cell with weight adjustment Electricity 2 Active
US8017472B2 CMOS devices having stress-altering material lining the isolation trenches and methods of manufacturing thereof Electricity 2 Active
US10332874B2 Indirect readout FET Electricity 2 Active
US7652336B2 Semiconductor devices and methods of manufacture thereof Electricity 2 Active
US10395713B2 One-transistor synapse cell with weight adjustment Electricity 2 Active
US10635970B2 Racetrack synapse for neuromorphic applications Physics 1 Active
US11195089B2 Multi-terminal cross-point synaptic device using nanocrystal dot structures Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.