Simplified double magnetic tunnel junctions
US10468455B2 · kind B2 · utility
4Cited by
15References
20Claims
0Family size
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Key dates
| Filing date | Apr 12, 2016 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Double magnetic tunnel junctions and methods of forming the same include a bottom reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is formed on the bottom reference layer. A free layer is formed on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is formed on the free layer. A top reference layer is formed on the second tunnel barrier and has a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is significantly smaller than the first thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.