Inventor · Somers, NY, US

Daniel C. Worledge

146Patents
11h-index
37Co-inventors
76Inventor score

Filing activity: Sep 16, 2002 → Aug 13, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6943571B2 Reduction of positional errors in a four point probe resistance measurement Physics 67 Expired
US8324697B2 Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory Electricity 56 Active
US7274057B2 Techniques for spin-flop switching with offset field Electricity 46 Expired
US6927569B2 Techniques for electrically characterizing tunnel junction film stacks with little or no processing Emerging Cross-Sectional Technologies 17 Expired
US8482968B2 Non-volatile magnetic tunnel junction transistor Physics 15 Active
US8896041B2 Spin hall effect assisted spin transfer torque magnetic random access memory Electricity 13 Active
US7433225B2 Scalable magnetic random access memory device Physics 12 Active
US8233249B2 Magnetic tunnel junction transistor device Electricity 12 Active
US7535069B2 Magnetic tunnel junction with enhanced magnetic switching characteristics Physics 12 Active
US8889433B2 Spin hall effect assisted spin transfer torque magnetic random access memory Electricity 11 Active
US8852762B2 Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers Emerging Cross-Sectional Technologies 11 Active
US9614144B1 OTP MRAM Electricity 10 Active
US6833573B1 Curvature anisotropy in magnetic bits for a magnetic random access memory Electricity 8 Expired
US8866207B2 Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory Electricity 8 Active
US8750033B2 Reading a cross point cell array Physics 7 Active
US8785966B2 Magnetic tunnel junction transistor devices Electricity 7 Active
US8102174B2 Techniques for electrically characterizing tunnel junction film stacks with little or no processing Emerging Cross-Sectional Technologies 7 Active
US8835889B1 Parallel shunt paths in thermally assisted magnetic memory cells Electricity 7 Active
US8456895B2 Magnonic magnetic random access memory device Physics 6 Active
US8283741B2 Optimized free layer for spin torque magnetic random access memory Electricity 6 Active
US9484531B2 Perpendicular magnetic anisotropy BCC multilayers Electricity 5 Active
US9496018B2 Nonvolatile memory interface for metadata shadowing Physics 5 Active
US8686520B2 Spin-torque magnetoresistive structures Electricity 4 Active
US10468455B2 Simplified double magnetic tunnel junctions Electricity 4 Active
US9087543B2 Spin torque MRAM having perpendicular magnetization with oxide interface Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.