Metal-insulator-metal (MIM) capacitor structure and method for forming the same
US10468478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Oct 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A metal-insulator-metal (MIM) capacitor structure and a method for forming the same are provided. The MIM capacitor structure includes a substrate, a bottom electrode layer, a first dielectric layer, a top electrode layer and first dielectric spacers. The bottom electrode layer is positioned over the substrate. The first dielectric layer is positioned over the bottom electrode layer. The top electrode layer is positioned over the first dielectric layer. The first dielectric spacers are positioned on opposite sidewalls of the bottom electrode layer. The first dielectric layer has a first dielectric constant. The first dielectric spacers have a second dielectric constant that is lower than the first dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.