High-voltage device and method for fabricating the same
US10468494B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Feb 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-voltage device includes a semiconductor substrate, a source diffusion region, a drain diffusion region, a channel diffusion region and a gate electrode. The source diffusion region and the drain diffusion region with a first conductive type are disposed in the semiconductor substrate. The channel diffusion region is disposed in the semiconductor substrate and between the source diffusion region and the drain diffusion region. The gate dielectric layer is disposed on the channel diffusion region and having a first modified portion with a second conductive type extending inwards from a first edge of the gate dielectric layer. The gate electrode is disposed on the gate electric layer, wherein the first modified portion, the gate electrode and the channel diffusion region at least partially overlap with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.