Method for producing a semiconductor body
US10468555B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2016 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Apr 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor body is disclosed. In an embodiment, the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening. The method further includes applying a passivation layer unpatterned to the second mask layer and to the side face and the bottom face of the at least one recess and removing the passivation layer so that the passivation layer remains at least in part on the side face of the at least one recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.