Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
US10468588B2 · kind B2 · utility
8Cited by
158References
20Claims
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Key dates
| Filing date | Jan 5, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jan 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the precessional spin current magnetic layer. The skyrmionic enhancement layer helps to improve the response of the precessional spin current magnetic layer to applied spin polarized currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.