High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
US10468590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2016 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | May 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure can be a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer separated by a thin Ruthenium layer. Each PMA layer can be a first cobalt layer and a second cobalt layer separated by a nickel/cobalt multilayer. After each of the first and second PMA layers and the Ruthenium exchange coupling layer are deposited, the resulting structure goes through a high temperature annealing step, which results in each of the first and second PMA layers having a perpendicular magnetic anisotropy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.