High dynamic range storage gate pixel circuitry
US10469775B2 · kind B2 · utility
5Cited by
7References
19Claims
0Family size
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Key dates
| Filing date | Mar 31, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Mar 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Image sensors may include image sensor pixels that support high dynamic range (HDR) global shutter function. An image sensor pixel may include a photodiode that is coupled to multiple storage gate nodes via respective charge transfer gates. Each of the multiple storage gate nodes may be configured to store charge corresponding to different exposure periods. The storage gate nodes may be coupled in parallel or in series with the photodiode. Charge from the different exposure times can then be merged to produce a high dynamic range image signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.