MEMS device integrated with a semiconductor integrated circuit and manufacturing method thereof
US10472232B2 · kind B2 · utility
0Cited by
3References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 9, 2016 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Mar 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R2201/003
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.