Patent · US Active

Temperature-controlled gas supply line with dilution gas flows supplied at multiple locations

US10472718B2 · kind B2 · utility

0Cited by

2References

11Claims

0Family size

Assignee

AIXTRON SE · DE

Inventors

Markus Gersdorff · Salzburg, AT
Martin Dauelsberg · Aachen, DE
Baskar Pagadala Gopi · Aachen, DE
Michael D. Long · Santa Cruz, US

Key dates

Filing date	Oct 1, 2015
Grant date	Nov 12, 2019
Priority date	—
Expiry date	Oct 16, 2036

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/52
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A device and a method for depositing organic layers onto a substrate includes a process gas source with a temperature-controlled evaporator, and a carrier gas supply line which opens into the evaporator in order to supply a carrier gas flow into a temperature-controlled first transport line. A first dilution gas supply line, which opens into the first transport line, supplies a dilution gas flow into the first transport line. The device also comprises a temperature-controlled gas inlet element fluidly connected to the first transport line. A gaseous starting material can be supplied into a processing chamber via the gas inlet element. A substrate is disposed on a temperature-controlled susceptor located in the processing chamber, and a layer is grown on the substrate using the gaseous starting material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.