Patent assignee · DE · COMPANY

AIXTRON SE

🏢 View company profile →
70Patents
70Active
70Granted
55Portfolio score

Filing activity: Jan 5, 2006 → Jul 19, 2023 · 4 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US9159608B2 Method for forming TiSiN thin film layer by using atomic layer deposition Electricity 12 Active
US9587312B2 Gas inlet member of a CVD reactor Chemistry; Metallurgy 11 Active
US9045818B2 Shadow mask held magnetically on a substrate support Electricity 10 Active
US9721759B1 System and method for distributing RF power to a plasma source Electricity 9 Active
US9970106B2 CVD system having particle separator Emerging Cross-Sectional Technologies 5 Active
US10316408B2 Delivery device, manufacturing system and process of manufacturing Chemistry; Metallurgy 5 Active
US9018105B2 CVD method and CVD reactor Chemistry; Metallurgy 4 Active
US10329668B2 Device and method for exhaust gas treatment on CVD reactor Emerging Cross-Sectional Technologies 4 Active
US10544519B2 Method and apparatus for surface preparation prior to epitaxial deposition Electricity 4 Active
US9988712B2 Substrate holding device Electricity 4 Active
US9942946B2 Device for generating vapor from solid or liquid starting material for CVD or PVD apparatus Electricity 2 Active
US10501847B2 Apparatus and method for generating a vapor for a CVD or PVD device Mechanical Engineering; Lighting; Heating 2 Active
US11702740B2 Closure element for closing a loading opening of an inner housing of a CVD reactor Electricity 2 Active
US8846501B2 Method for equipping an epitaxy reactor Chemistry; Metallurgy 2 Active
US9443702B2 Methods for plasma processing Electricity 2 Active
US11168410B2 Susceptor for a chemical vapour deposition reactor Electricity 1 Active
US11396697B2 Device for separating a structured layer on a substrate, and method for setting up the device Chemistry; Metallurgy 1 Active
US9822451B2 Device and method for manufacturing nanostructures consisting of carbon Chemistry; Metallurgy 1 Active
US8841221B2 MOCVD reactor having cylindrical gas inlet element Chemistry; Metallurgy 1 Active
US11713505B2 Device and method for controlling the ceiling temperature of a CVD reactor Chemistry; Metallurgy 1 Active
US10049859B2 Plasma generating units for processing a substrate Electricity 1 Active
US10526708B2 Methods for forming thin protective and optical layers on substrates Electricity 1 Active
US9447500B2 CVD reactor having a substrate holder resting on a gas cushion comprising a plurality of zones Chemistry; Metallurgy 1 Active
US10221482B2 Gas distributor for a CVD reactor Chemistry; Metallurgy 1 Active
US8349081B2 Gas distributor with pre-chambers arranged in planes Chemistry; Metallurgy 1 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.